METHOD OF MANUFACTURING OXIDE SEMICONDUCTOR THIN FILM, OXIDE SEMICONDUCTOR THIN FILM, METHOD OF MANUFACTURING THIN FILM TRANSISTOR, THIN FILM TRANSISTOR, AND DEVICE HAVING THIN FILM TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To manufacture an IGZO-system oxide thin film having a high reproducibility and suitable for producing a large area device, especially a flexible device, without heat treatment at a high temperature of 300°C or higher.;SOLUTION: An oxide semiconductor thin film in which In, Ga, Zn, and O are used as main constituent elements, and in which a composition ratio satisfies relationships of 11/20≤Ga/(In+Ga+Zn)≤9/10, 3/4≤Ga/(In+Ga)≤9/10, and Zn/(In+Ga+Zn)≤1/3, is formed in an argon gas atmosphere by the sputtering method without introducing an oxygen gas. Heat treatment at equal to or higher than 100°C and lower than 300°C is performed in an oxidative atmosphere to the formed oxide semiconductor thin film.;COPYRIGHT: (C)2012,JPO&INPIT