Theoretical and Experimental Study of the Effect of InAs Growth Rate on the Properties of QD Arrays in InAs/GaAs System

摘要

The dependence of properties of quantum dot (QD) arrays in an InAs/GaAs system on the InAs growth rate has been investigated theoretically and experimentally. The derived kinetic model of the formation of coherent nanoislands allows the calculation of the average size, surface density of islands, and wetting layer thickness as functions of the growth time and conditions. optical properties of InAs/GaAs QDs have been studied for the case of two monolayers (ML) of the material deposited at different growth rates. Predictions of the theoretical model are compared with the experimental data. it is shown that with two ML of the deosited material the characteristic lateral size of QDs decreases and teh thickness of the residual wetting layer increases with rising growth rate.