Electrical and photoelectric properties of n-TiN/p-Hg3In2Te6 heterostructures

摘要

n-TiN/p-Hg3In2Te6 heterostructures are fabricated by depositing a thin n-type titanium nitride (TiN) film onto prepared p-type Hg3In2Te6 plates using reactive magnetron sputtering. Their electrical and photoelectric properties are studied. Dominant charge-transport mechanisms under forward bias are analyzed within tunneling-recombination and tunneling models. The fabricated n-TiN/p-Hg3In2Te6 structures have the following photoelectric parameters at an illumination intensity of 80 mW/cm(2): the open-circuit voltage is V (OC) = 0.52 V, the short-circuit current is I (SC) = 0.265 mA/cm(2), and the fill factor is FF = 0.39.