ZnO-based p-n heterostructure controlled surface morphology and enhanced photoelectric properties, and fabrication method thereof

摘要

The present invention relates to a zinc oxide-based pn heterojunction structure including an n-type zinc oxide semiconductor with improved surface morphology control and photoelectric properties through metal doping and supply of hydroxide ions. According to the invention, doped with an n-type metal on the zinc oxide semiconductor of n-type ZnO / p-type semiconductor heterojunction structure, and the hydroxyl ion (OH ^-) by the addition of, trade for the hydroxide ion consumed by homogeneous nucleation By giving off (trade-off), the intrinsic donor defect of the zinc oxide semiconductor is compensated, and morphological, structural, optical, and electrical properties are improved.