Si/Zn x Cd1- x Te heterostructures with different Zn contents: growth, electrical and photoelectrical properties

摘要

TheZnxCd1-xTefilmswithx=0÷0.97aregrownbyvacuumdepositioninquasiequilibriumconditionsonsinglecrystalSi(111)substrates.Thedetailsofthegrowthprocesswereanalyzed.Thepossibilitiesofthequasi-closedvolumemethodforproducinghighqualityhomogeneouslayersofsolidsolutionswereevaluated.Itisshownthatthismethodisveryeffectivefortheproductionoffilmswithx0.1andmaybeimplementedatcondensationtemperaturesupto~300°C.StudiesofelectricalandphotovoltaicpropertiesshowedhighqualityofZnxCd1-xTelayersandstructuresingeneral.Thisis,inparticular,evidencedbyincreasingphotosensitivityintheregionofabsorptionofthefilmmaterial,andofthestructureasawhole,increasingintegralsensitivitywithzincdoping,asignificantreductioninnonidealityfactorinsolidsolutionfilmsascomparedwithCdTefilms.WehaveestablishedanincreaseofmechanicalstabilityofthestructurewithincreasingZncontent,expressedinmaintainingthestrengthduringrepeatedthermalcycling.Asaresult,themanufacturedSi/ZnxCd1-xTeheterostructurescanserveasabasisforfabricationofmultijunctionsolarenergyconverters...