Special features of conductivity mechanisms in heavily doped n-ZrNiSn intermetallic semiconductors

摘要

The effect of high concentrations of acceptor dopants (N-A approximate to 10(20) cm(-3)) on the electronic structure, Fermi level, electrical conductivity, Seebeck coefficient, and magnetic susceptibility of n-ZrNiSn intermetallic semiconductors is studied. The role of impurity bands produced by donors and acceptors in the conductivity of the heavily doped n-ZrNiSn compound is clarified. The transition from activated conductivity to metal conductivity under variations in the concentration of acceptor dopants is observed.