Capacitive pressure sensor with monolithically integrated CMOS readout circuit for high temperature applications

摘要

An integrated capacitive surface micromachined pressure sensor for high temperature applications was developed and characterized to work at temperatures up to 250 degreesC. The sensor and the CMOS readout circuit are processed on separation by implantation of oxygen (SIMOX) substrates. The readout circuit is programmable and allows calibration of linearity, offset and output range. The performance of a 20 and 50 bar sensor is discussed. Even without active temperature compensation the offset temperature coefficient (TCO) referred to full scale output (FSO) is less than 0.03%/degreesC between 25 and 150 degreesC and less than 0.09%/degreesC between 150 and 250 degreesC. The compensated linearity error is less than 0.4% FSO. (C) 2002 Elsevier Science B.V. All rights reserved. [References: 8]