Preparation and characterization of single crystalline In_2O_3 films deposited on MgO (110) substrates by MOCVD

摘要

Epitaxial indium oxide (In_2O_3) films have been prepared on MgO (110) substrates by metal-organic chemical vapor deposition (MOCVD). The deposition temperature varies from 500 ℃ to 700 ℃. The films deposited at each temperature display a cube-on-cube orientation relation with respect to the substrate. The In_2O_3 film deposited at 600 ℃ exhibits the best crystalline quality. A clear epitaxial relationship of In_2O_3 (110) ||MgO (110) with In_2O_3 [001]||MgO [001] has been observed from the interface area between the film and the substrate. The average transmittance of the prepared films in the visible range is over 95%. The band gap of the obtained In_2O_3 films is about 3.55-3.70 eV.