The g-r noise in quantum well semiconductor lasers and its relation with device reliability

摘要

The g-r noise in quantum well semiconductor lasers is studied theoretically and experimentally. The results indicate that the g-r noise is dependent on bias current, the devices show the g-r a noise only at low bias current, with the bias current increasing, the g-r noise will disappear. The g-r noise has a close relation with defects; the devices with g-r noise degrade rapidly during the electric aging. It is means that measuring the noise at low bias current is very important for estimating device reliability. (c) 2005 Elsevier Ltd. All rights reserved.