Selective oxidation of aluminum-bearing III-V semiconductors: Properties and applications to quantum well heterostructure lasers and transistor devices

摘要

In this work, the water vapor oxidation of Al-bearing III-V compound semiconductors is used to fabricate light-emitting and electronic devices. High Al-composition heterostructure crystals such as Al$sb{m x}$Ga$sb{m 1-x}$As (x $sbsp{sim}{>}$ 0.5) are converted into a stable native oxide at moderately elevated temperatures ($sbsp{sim}{>}400 spcirc$C) in a water vapor saturated ambient. Dependence of the oxidation process on Al composition makes possible the formation of embedded oxide layers in between semiconductor crystal using selective (lateral) oxidation. Data are presented showing how various growth parameters, crystal layering, and oxidation times and temperatures affect the lateral oxidation process. Etch studies of superlattice structures that are Zn-diffused and oxidized are also presented showing that the water vapor oxidation process behaves similarly to chemical wet etches.