Physical Principles of Laser Simulation for the Transient Radiation Response of Semiconductor Structures, Active Circuit Elements, and Circuits: A Linear Model

摘要

The physical principles are considered of laser-matter interaction in the semiconductor regions of microelectronic structures. It is demonstrated that laser irradiation represents an efficient method for simulating the transient response to pulsed high-energy ionizing radiation. In a linear approximation, computational formulae are derived for the depth profile of equivalent dose rate for front- and back-side laser illumination, subject to optical absorption, multiple reflections, and doping level. Formulae are presented by which to compute equivalent dose rate for standard silicon chips.