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Long-Range Stresses Generated by Misfit Dislocations in Epitaxial Films

机译:外延膜错配位错产生的远距离应力

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摘要

For the first time, an equation is derived that relates the misfit parameter f, the number of misfit dislocation (MD) families, and the distances between MDs of the same family, and the projection value of edge Burger's vector component on the interface. The equation is valid for various interface boundaries (hkl). To derive this equation, the long-range normal and shear stresses associated with MD distribution are considered. The optimum and nonoptimum stress releasing processes are discussed. The problem of threading dislocation density diminution with generation of the intersecting MDs having the same Burger's vector (L-shaped MDs) is considered for (001) and (111) interfaces. It is shown that such MDs can be effectively generated only at the initial stage of the releasing process, since generating is accompanied by the increase in the level of long-range shear stresses.
机译:首次推导了一个方程,该方程将失配参数f,失配位错(MD)族的数量,相同族的MD之间的距离与边缘Burgers矢量分量在界面上的投影值相关联。该公式对各种界面边界(hkl)有效。为了推导该方程式,考虑了与MD分布相关的远程法向应力和剪应力。讨论了最佳和非最佳应力释放过程。对于(001)和(111)界面考虑了随着具有相同汉堡向量(L形MD)的相交MD的产生而导致的螺纹位错密度减小的问题。结果表明,这种MDs只有在释放过程的初始阶段才能有效地产生,因为产生伴随着长程剪切应力水平的增加。

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