The formation of the ong-range compressive-tensile stress field in growing epitaxial films is discussed. Vicinal substrate orientations are classified for the first time in some types depending on existence of the principal physical imilations to grow perfect films in fully relaxed semiconductor systems. SOme prientations in the vicinity of 001 and 111 signular ones are potentially suitable to botain perect thin semiconductor laers, if only two perpendicular arrays of misfit dislocations are introduced during the quasi-equilibrim process of lastic relaxation. The film thickness must be less than the distance between two neighbouring misfit dislocatiojns in the reaxed system. For thick epitaxial films, the problem needs further investigation.
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