Formation and Dielectric Properties of Nanolayers of Tantalum and Aluminum Oxides

摘要

The results of investigations of processes for the formation of nanolayers of tantalum and aluminum oxides and multilayer compositions obtained by molecular layering onto silicon (100) and aluminum surfaces are presented. The conditions of the layer-by-layer growth of oxide structures and low-dimensional multilayer systems with alternating regions of the mentioned oxides are determined. The dielectric parameters of the synthesized nanostructures are evaluated.