The formation of MoS2 secondary phase at the Cu-Zn-Sn-S/Mo interface during the sulfurization process of Cu-Zn-Sn precursor films

摘要

We report on the influence of the sulfurization conditions on the MoS2 secondary phase formation in Cu-Zn-Sn-S thin films synthesized by thermal evaporation method of metals and intermetallics that can be used for the formation of absorbing layers of solar cells. The dependence between photoconductivity and the intensity of the base line of MoS2 was found in Raman spectra, which is described by a curve with characteristic maximum. It was found that the secondary phase formation on the Cu-Zn-Sn-S/Mo boundary and photoconductivity of sulfurized films are strongly dependent on the applied temperature conditions. Specifically, films without MoS2 phase have a low photoconductivity, whereas a high photoconductivity was observed for the films with significant content of secondary phase.