MoS2 MoS2 thin film and preparation method thereof

摘要

The present invention relates to a thin MoS2 film and a method of manufacturing the same. According to the present invention, an objective of a thin MoS2 film and a method of manufacturing the same is to provide a thin MoS2 film by an atomic layer deposition method. Particularly, the thin MoS2 film does not use harmful gas such as H2S as a sulfur precursor while being manufactured by the atomic layer deposition method, thereby being eco-friendly. Also, damages and contamination of manufacturing equipment during a manufacturing process may be prevented. Also, the thickness of the thin MoS2 film may be precisely controlled in the atomic layer level. According to an aspect of the present invention, the thin MoS2 film is formed of a molybdenum precursor and a sulfur precursor, and is grown using the atomic layer deposition method. According to another aspect of the present invention, a method of manufacturing the thin MoS2 film includes steps of: 1) supplying the molybdenum precursor inside a vacuum reactor to form a chemical action base layer including Mo on a substrate; 2) supplying inert gas inside the reactor after the step 1) to remove the remainder of the molybdenum precursor and by-products not formed into the chemical action base layer including Mo; 3) supplying the sulfur precursor inside the reactor to chemically absorb the sulfur precursor into the chemical action base layer including Mo in order to form an atomic MoS2 layer; and 4) supplying inert gas inside the reactor after the step 3) to remove the sulfur precursor and by-products not absorbed into the chemical action base layer including Mo.;COPYRIGHT KIPO 2015