Growth of CZTS thin films by sulfurization of sputtered single-layered Cu-Zn-Sn metallic precursors from an alloy target

摘要

Cu_2ZnSnS_4 (CZTS) thin films were prepared by sulfurizing single-layered metallic Cu-Zn-Sn precursors which were deposited by DC magnetron sputtering using a Cu-Zn-Sn ternary alloy target. The composition, micro-structure and properties of the CZTS thin films prepared under different sputtering pressure and DC power were investigated. The results showed that the sputtering rate of Cu atom increases as the sputtering pressure and DC power increased. The microstructure of CZTS thin films can be optimized by sputtering pressure and DC power. The CZTS thin film prepared under 1 Pa and 30 W showed a pure Kesterite phase and a dense micro-structure. The direct optical band gap of this CZTS thin film was calculated as 1.49 eV with a high optical absorption coefficient over 10~4 cm~(-1). The Hall measurement showed the film is a p-type semiconductor with a resistivity of 1.06 Ω cm,acarrierconcentration of 7.904 × 10~(17)cm~(-3) and a mobility of 7.47 cm~2 Vs~(-1).