首页> 外国专利> The sputtering target material for thin film formation which features that it consists of the metallic materials of 2 original alloys which the sputtering target material for thin film formation,

The sputtering target material for thin film formation which features that it consists of the metallic materials of 2 original alloys which the sputtering target material for thin film formation,

机译:薄膜形成用溅射靶材的特征在于,其由2种原始合金的金属材料构成,该薄膜形成用溅射靶材具有:

摘要

PPROBLEM TO BE SOLVED: To provide a sputtering target material for forming a thin film, which improves manufacturing easiness in a step of manufacturing an alloy, and stability and simplicity in a sputtering step when using it for a sputtering target. PSOLUTION: The sputtering target material for forming the thin film is made of a metallic material including Ag as a main component and 0.1-3.0 wt.% Mo. The use of such a sputtering target material for forming the thin film solves the problems in a prior art, and realizes a technology having various superior characteristics as the components of the various electronic components, electronic devices, optoelectronic components and optical recording media, while utilizing the advantages of Ag. PCOPYRIGHT: (C)2004,JPO&NCIPI
机译:<解决的问题:提供一种用于形成薄膜的溅射靶材料,该溅射靶材料在制造合金的步骤中提高了制造的容易性,并且当将其用于溅射靶时提高了溅射步骤中的稳定性和简便性。

解决方案:用于形成薄膜的溅射靶材料由包括Ag作为主要成分和0.1-3.0 wt。%Mo的金属材料制成。使用这种用于形成薄膜的溅射靶材料解决了以下问题:解决了现有技术中的问题,并且在利用Ag的优点的同时,实现了具有作为各种电子部件,电子设备,光电部件和光学记录介质的部件的各种优异特性的技术。

版权:(C)2004,日本特许厅和日本国家唱片公司

著录项

  • 公开/公告号JP4001823B2

    专利类型

  • 公开/公告日2007-10-31

    原文格式PDF

  • 申请/专利权人 デプト株式会社;

    申请/专利号JP20030027101

  • 发明设计人 上野 崇;

    申请日2003-02-04

  • 分类号C22C5/06;C23C14/34;H01L29/43;H01L21/285;H01L21/28;H01B1/02;H01B13/00;G11B7/258;G11B7/26;

  • 国家 JP

  • 入库时间 2022-08-21 21:10:26

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