首页> 外文学位 >Ferromagnetic relaxation in (1) Metallic thin films and (2) Bulk ferrites and composite materials for information storage device and microwave applications.
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Ferromagnetic relaxation in (1) Metallic thin films and (2) Bulk ferrites and composite materials for information storage device and microwave applications.

机译:(1)金属薄膜和(2)块状铁氧体以及用于信息存储设备和微波应用的复合材料中的铁磁弛豫。

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摘要

For a better understanding of fundamental magnetic loss processes in materials needed for microwave and information storage device applications, the ferromagnetic resonance (FMR) linewidth has been studied in (1) ferromagnetic metal films, (2) bulk ferrites, and (3) ferrite-ferroelectric composites. These materials have wide applications for high density magnetic storage as well as microwave isolators and circulators. The field of microwave magnetics, especially for magnetic metals, is ruled by a set of purely phenomenological models for the damping of the magnetodynamics. These operational models are supplemented by models for actual physical loss mechanisms. All of these models, phenomenological and physical, yield specific predictions of the linewidth vs. frequency response. Data on the frequency dependence of the ferromagnetic resonance linewidth can provide (1) insight into the relevant microwave loss processes and (2) a guide for the proper application of the different phenomenological models to materials design and device development. Comprehensive linewidth data also allow for (1) the identification of truly intrinsic losses and (2) the clarification of extrinsic losses due to inhomogeneities, imperfections, etc., that are candidates for elimination through the development of better materials.; The frequency dependence of the FMR linewidth in Permalloy films shows that the dominant loss mechanism is akin to a Landau-Lifshitz or Gilbert type of phenomenological damping model. This trend matches the physical process of magnon-electron scattering. The frequency dependence of the Permalloy film FMR linewidth can be modeled by a combination of Landau-Lifshitz/Gilbert damping and broadening due to ripple fields and inhomogeneities. In Fe-Ti-N thin films, there are large extrinsic contributions that relate to two magnon scattering. This appears to be connected with changes in crystal structure due to the addition of nitrogen to the Fe-Ti matrix. The frequency dependence of the linewidth in hot isostatic pressed polycrystalline yttrium iron garnet explicitly demonstrates the anisotropy based two magnon scattering process for the randomly oriented grains. Microwave loss data for nickel zinc/barium strontium titanate composite materials show that composite or multifunctional materials can play a useful role in future systems that require electric field tuning and low power budgets.
机译:为了更好地了解微波和信息存储设备应用所需材料中的基本磁损耗过程,已经在(1)铁磁金属膜,(2)块状铁氧体和(3)铁氧体中研究了铁磁共振(FMR)线宽。铁电复合材料。这些材料在高密度磁存储以及微波隔离器和循环器中具有广泛的应用。微波磁学领域,特别是对于磁性金属,是由一组纯粹的现象学模型决定的,这些模型用于磁动力学的阻尼。这些操作模型由实际物理损失机制的模型补充。所有这些现象学和物理模型都可以得出线宽与频率响应的特定预测。有关铁磁共振线宽的频率依赖性的数据可提供(1)深入了解相关的微波损耗过程,以及(2)将不同的现象学模型正确应用到材料设计和设备开发的指南。全面的线宽数据还允许(1)识别真正的固有损耗,以及(2)澄清由于不均匀,不完美等导致的外部损耗,这些均可以通过开发更好的材料来消除。坡莫合金薄膜中FMR线宽的频率依赖性表明,主要的损耗机制类似于现象阻尼模型的Landau-Lifshitz或Gilbert型。这一趋势与磁电子散射的物理过程相吻合。坡莫合金薄膜FMR线宽的频率依赖性可以通过结合Landau-Lifshitz / Gilbert阻尼和由于纹波场和不均匀性而加宽来建模。在Fe-Ti-N薄膜中,与两个磁振子散射有关的外在贡献很大。由于向Fe-Ti基体中添加了氮,这似乎与晶体结构的变化有关。热等静压多晶钇铁石榴石中线宽的频率依赖性清楚地证明了随机取向晶粒的基于各向异性的两个磁振子散射过程。镍锌/钛酸锶锶钡复合材料的微波损耗数据表明,复合材料或多功能材料在需要电场调谐和低功率预算的未来系统中可以发挥有用的作用。

著录项

  • 作者

    Kalarickal, Sangita S.;

  • 作者单位

    Colorado State University.;

  • 授予单位 Colorado State University.;
  • 学科 Physics Electricity and Magnetism.; Physics Condensed Matter.
  • 学位 Ph.D.
  • 年度 2006
  • 页码 216 p.
  • 总页数 216
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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