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首页> 外文期刊>Progress in Solid State Chemistry >Phase separation and disorder in half metallic ferromagnetic manganite thin films: A theoretical study looking forward low noise nano-devices
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Phase separation and disorder in half metallic ferromagnetic manganite thin films: A theoretical study looking forward low noise nano-devices

机译:半金属铁磁锰矿薄膜中的相分离和无序:期待低噪声纳米器件的理论研究

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摘要

The resistivity of thin La_(0.7)Sr_(0.3)MnO_3 films was first investigated in a wide temperature (T) range (10–750 K). Films grown by different techniques and on several substrates enabled to analyze samples with different amounts of disorder. The aim of this work was to elucidate the nature of the metal–insulator (M–I) transition occurring at T = Tp in these films and its relation with the different kinds of inhomogeneities they could present like intrinsic electric disorder and co-existence of two different electrical and/or magnetic phases. The low-temperature resistivity state was described mostly by a law which scales as Tα with α ≈ 2.5. This supports the theoretical proposal of single magnon scattering in presence of minority spin states localized by the disorder. In the whole range of temperatures the experimental data are found to be consistent with a phase separation (PS) scenario. In order to go through the origin of the characteristic length scale of inhomogeneity found, preliminarily low frequency noise measurements as a function of T in a range of temperature around the M–I transition were made. The samples used were patterned using photolithography into bridges with various widths and lengths. No clear sign of separation phase dynamic has been observed in our noise measurements. Unexpectedly the normalized Hooge parameter αH was found not to be volume (Ω) independent. The LSMO electrical properties may strongly be driven by disorder and new design for magnetoresistance sensors may have to take into account their intrinsic PS.
机译:首先在较宽的温度(T)范围(10–750 K)中研究了La_(0.7)Sr_(0.3)MnO_3薄膜的电阻率。通过不同技术在几种基材上生长的薄膜能够分析具有不同杂乱程度的样品。这项工作的目的是阐明这些薄膜中T = Tp时发生的金属-绝缘体(M–I)跃迁的性质,以及它们与它们可能表现出的不同种类的不均匀性的关系,例如内在电无序和两种不同的电和/或磁相。低温电阻率状态主要由定律定为Tα,α≈2.5。这支持了在无序局部存在的少数自旋状态下单磁振子散射的理论建议。在整个温度范围内,实验数据与相分离(PS)场景一致。为了了解所发现的不均匀性的特征长度尺度的起源,在M–I跃迁附近的温度范围内,初步进行了低频噪声测量,该测量是T的函数。使用光刻将所使用的样品构图成具有各种宽度和长度的桥。在我们的噪声测量中,没有观察到分离相动态的明显迹象。出乎意料的是,发现归一化的Hooge参数αH/ n与体积(Ω)无关。 LSMO的电性能可能受无序性的强烈驱动,因此磁阻传感器的新设计可能必须考虑其固有PS。

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