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PHOTONIC FRONTIERS: EUV LITHOGRAPHY - EUV lithography has yet to find its way into the fab

机译:光子前沿:EUV光刻-EUV光刻技术尚未进入晶圆厂

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Demonstration of extreme ultraviolet (EUV) sources delivering tens of watts to wafers is a major milestone, and shipments will begin later this year. But serious challenges remain in reaching the performance needed for mass production of chips. Extreme ultraviolet (EUV) sources are the future of semiconductor photolithography-and they have been in the future for long time. Those with a long view could see the trend of shrinking chip features in the 1990s, as 248 nm krypton-fluoride (KrF) laser sources replaced mercury lamps, and 193 nm argon-fluoride (ArF) lasers were developed for even smaller geometries. By 2003, EUV sources had found a place about a decade out on the semiconductor development roadmap. Now it's 2013, and EUV has yet to reach the factory floor.
机译:演示向晶圆输送数十瓦功率的极紫外(EUV)源是一个重要的里程碑,并且将于今年晚些时候开始发货。但是,在实现大规模生产芯片所需的性能方面仍然存在严峻的挑战。极紫外(EUV)源是半导体光刻的未来,并且它们已经存在了很长时间。那些具有长远眼光的人可能会看到1990年代芯片功能不断缩小的趋势,因为248 nm氟化rypto(KrF)激光源取代了汞灯,而193 nm氟化氩(ArF)激光器被开发用于更小的几何形状。到2003年,EUV消息人士已经在半导体发展路线图上找到了约十年的位置。现在是2013年,EUV尚未到达工厂。

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