Strained-layer InGaAs Quantum-well Lasers Emitting beyond 2 micro-meter

摘要

Semiconductor lasers emitting in the mid-infrared wavelength region have attracted much attention as light sources for environmental and medical applications. We have succeeded in developing strained-layer InGaAs quantum-well lasers on InP that exhibit single-mode operation with emission wavelengths beyond 2 micro-meter by using the technologically mature fabrication techniques of telecommunications lasers. Fabricated distributed-feedback lasers exhibit continuous wave operation in the temperature range from 15 to 55?OC, emission wavelengths longer than 2.1 micro-m, and optical output power higher than 10 mW at 25?OC. These laser characteristics are sufficient for practical light sources for laser-based spectroscopy.