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机译:
Semiconductor Physics Institute of Center for Physical Science and Technology, Vilnius 01108, Lithuania;
Virginia Commonwealth University, Richmond, Virginia 23284, USA;
机译:Effects of GaN channel downscaling in AlGaN–GaN high electron mobility transistor structures grown on AlN bulk substrate
机译:On the Channel Hot-Electron’s Interaction With C-Doped GaN Buffer and Resultant Gate Degradation in AlGaN/GaN HEMTs
机译:Impact of Channel Thickness on the Large-Signal Performance in InAlGaN/AlN/GaN HEMTs With an AlGaN Back Barrier
机译:初始AlN成核层顶部初始ALN核核液体和垂直漏电流AlGaN缓冲层的关系与AlGaN / GaN高电子 - 迁移率晶体管结构的垂直漏电流
机译:块状AlN单晶衬底上的富铝AlGaN和AlN生长
机译:使用AlGaN / GaN / AlGaN量子阱电子阻挡层的AlGaN / GaN HEMT中的高击穿电压
机译:AlN和GaN脉冲比在热原子层沉积AlGaN上的影响AlGaN in AlGaN / GaN肖特基二极管电学性能
机译:无掺杂GaN / alN / alGaN径向纳米线异质结构作为高电子迁移率晶体管。