High-mobility and low-power thin-film transistorsbased on multilayer mos2 crystals

摘要

Unlike graphene, the existence of bandgaps (1–2eV) in the layered semiconductor molybdenumdisulphide, combined with mobility enhancement by dielectric engineering, offers an attractivepossibility of using single-layer molybdenum disulphide field-effect transistors in low-powerswitching devices. However, the complicated process of fabricating single-layer molybdenumdisulphide with an additional high-k dielectric layer may significantly limit its compatibilitywith commercial fabrication. Here we show the first comprehensive investigation of processfriendly multilayer molybdenum disulphide field-effect transistors to demonstrate a compelling case for their applications in thin-film transistors. our multilayermolybdenum disulphidefield-effect transistors exhibited high mobilities (>100cm2V~(-1)s~(-1)), near-ideal subthreshold swings (-70mV per decade) and robust current saturation over a large voltage window. With simulations based on shockley’s long-channel transistor model andcalculations of scatteringmechanisms, these results provide potentially important implications in the fabrication of highresolution large-area displays and further scientific investigation of various physical propertiesexpected in other layered semiconductors.