Highly stable resistive switching on monocrystalline ZnO

摘要

We report on the achievement of planar memristive devices on monocrystalline ZnO substrates using Ti/Al and Pt/Au contacts with dimensions of 100 x 100 mu m(2) and spacings of similar to 60 mu m. Effects of both thermal and electro-forming processes on the switching characteristics are investigated. It is observed that the thermally formed devices exhibit an extremely large R-OFF/R-ON value of similar to 20 000. The electrically formed devices, on the other hand, demonstrate an exceptional switching stability, with R-OFF/R-ON variations of <2% for durations of over 10(5) s and more than 1800 switching cycles. The dependence of the switching characteristics on the formation processes, as well as the metal electrodes, could be explained by an oxygen vacancy formation/annihilation and migration model.