Method of forming resist pattern and thermally stable and highly resolved resist pattern

摘要

Positive photoresist compositions are provided which containP P(a) a mixture of mono-, di-, and triesters of 2, 3,4- trihydroxybenzophenone and 1,2-naphthoquinone-2-diazo-4-sulfonic acid andPP(b) a novolak resin selected from resins prepared from a phenolic component having a high p-cresol content or from a mixture of formaldehyde and an aromatic aldehyde.