PATTERN FORMING METHOD CAPABLE OF STABLY FORMING HIGHLY PRECISE MICRO-PATTERN, A RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, A DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND A RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD

摘要

PURPOSE: A pattern forming method, a resist composition for multiple development used in the pattern forming method, a developer for negative development used in the pattern forming method, and a rinsing solution for negative development used in the pattern forming method are provided to obtain superior dissolution contrast and sensitivity by radiating extreme ultraviolet ray.;CONSTITUTION: A pattern forming method includes the following: A positive resist composition is applied on a substrate to form a resist layer. The solubility of the positive resist composition increases in a positive developing solution and decreases in a negative developing solution according to the irradiation of active ray or ultraviolet ray. The resist layer is exposed and is developed using a negative developing solution containing an organic solvent. The developing solution is represented by chemical formula 1 or 2.;COPYRIGHT KIPO 2012