The fabrication of cubic boron nitride nanocone and nanopillar arrays via reactive ion etching

摘要

High-density (2 x 10~9 cm~(-2)) uniform arrays of cubic boron nitride (cBN) nanocones and nanopillars with a high aspect ratio were fabricated by employing sequential growth and bias-assisted reactive ion etching using gold nano-dots as an etching mask. The mechanism of formation of the nanopillar and nanocone morphologies was discussed in terms of the relative action of ion bombardment etching and chemical etching due to activated hydrogen plasma constituents. The presented method enabled nanostructuring of cBN surfaces over large areas with great uniformity and reproducibility with a controlled aspect ratio. The unique morphology of the nanostructures offers diverse application opportunities in microelectromechanical devices.