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Wafer-Scale Hierarchical Nanopillar Arrays Based on Au Masks and Reactive Ion Etching for Effective 3D SERS Substrate

机译:基于Au掩模和反应性离子刻蚀的晶圆级分层纳米柱阵列用于有效的3D SERS基板

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摘要

Two-dimensional (2D) periodic microanostructured arrays as SERS substrates have attracted intense attention due to their excellent uniformity and good stability. In this work, periodic hierarchical SiO2 nanopillar arrays decorated with Ag nanoparticles (NPs) with clean surface were prepared on a wafer-scale using monolayer Au NP arrays as masks, followed by reactive ion etching (RIE), depositing Ag layer and annealing. For the prepared SiO2 nanopillar arrays decorated with Ag NPs, the size of Ag NPs was tuned from ca. 24 to 126 nanometers by controlling the deposition thickness of Ag film. Importantly, the SiO2 nanopillar arrays decorated with Ag NPs could be used as highly sensitive SERS substrate for the detection of 4-aminothiophenol (4-ATP) and rhodamine 6G (R6G) due to the high loading of Ag NPs and a very uniform morphology. With a deposition thickness of Ag layer of 30 nm, the SiO2 nanopillar arrays decorated with Ag NPs exhibited the best sensitive SERS activity. The excellent SERS performance of this substrate is mainly attributed to high-density “hotspots” derived from nanogaps between Ag NPs. Furthermore, this strategy might be extended to synthesize other nanostructured arrays with a large area, which are difficult to be prepared only via conventional wet-chemical or physical methods.
机译:二维(2D)周期性微/纳米结构阵列作为SERS基板,由于其出色的均匀性和良好的稳定性而备受关注。在这项工作中,使用单层Au NP阵列作为掩膜,在晶片规模上制备了用干净的Ag纳米粒子(NPs)装饰的周期性分层SiO2纳米柱阵列,然后进行反应离子刻蚀(RIE),沉积Ag层和退火。对于用Ag NP修饰的制备的SiO2纳米柱阵列,Ag NP的大小可从ca调整。通过控制Ag膜的沉积厚度在24至126纳米之间。重要的是,由于Ag NPs的高负载和非常均匀的形态,用Ag NPs装饰的SiO2纳米柱阵列可以用作高灵敏度的SERS底物,用于检测4-氨基硫酚(4-ATP)和若丹明6G(R6G)。 Ag层的沉积厚度为30 nm,用Ag NPs装饰的SiO2纳米柱阵列表现出最佳的SERS活性。该基质出色的SERS性能主要归因于源自Ag NP之间纳米间隙的高密度“热点”。此外,该策略可以扩展到合成具有大面积的其他纳米结构阵列,这些阵列仅通过常规的湿化学或物理方法难以制备。

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