Scaling down lateral dimensions of silicon nanopillars fabricated by reactive ion etching with Au/Cr self-assembled clusters as an etch mask

摘要

Nanodot and nanopillar structures and precisely controlled reproducible fabrication thereof are of great interest in common nanoelectronic devices, including photonic crystals and surface plasmon resonance instruments. In this work, fabrication process of the silicon nanopillar structures is described. It includes self-organization of gold and chromium clusters at thickness close to that of one atomic diameter to serve as etching masks followed by the reactive ion etching to form silicon nanopillars. Scanning electron microscopy and X-ray photoelectron spectroscopy were used to characterize self-organized gold and chromium clusters as well as the final silicon nanopillars. This method was found to produce silicon nanopillars of sub-10 nm lateral dimensions and the diameter-to-height aspect ratio of up to 1:14.