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The growth mechanism for silicon oxide nanowires synthesized from an Au nanoparticle/polyimide/Si thin film stack

机译:由金纳米粒子/聚酰亚胺/硅薄膜叠层合成的氧化硅纳米线的生长机理

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摘要

During pyrolysis of polyimide ( PI) thin film, amorphous silicon oxide nanowires (SiO(x)NWs) were produced on a large scale through heat treatment of an Au nanoparticle/PI/Si thin film stack at 1000 degrees C. It was shown that carbonization of the PI film preceded the nucleation of the SiOxNWs. The formation of the SiOxNWs was sustained by the oxygen derived from carbonization of the polyimide thin film while Si was provided from the substrate. Au nanoparticles promoted the SiOxNW growth by inducing localized melting of the Si substrate and by catalyzing the nanowire growth.
机译:在聚酰亚胺(PI)薄膜的热解过程中,通过在1000摄氏度下对Au纳米颗粒/ PI / Si薄膜堆叠进行热处理,大规模生产了非晶氧化硅纳米线(SiO(x)NWs)。 PI膜的碳化先于SiOxNWs成核。 SiOxNWs的形成由聚酰亚胺薄膜碳化产生的氧维持,而Si由基板提供。金纳米颗粒通过诱导Si衬底的局部熔化并催化纳米线的生长来促进SiOxNW的生长。

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