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Even nucleation between silicon and oxide surfaces for thin silicon nitride film growth
Even nucleation between silicon and oxide surfaces for thin silicon nitride film growth
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机译:硅和氧化物表面之间均匀成核,从而形成氮化硅薄膜
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摘要
A semiconductor assembly providing even nucleation between silicon and oxide surfaces for growing uniformly thin silicon nitride layers used in semiconductor devices is disclosed. First, a nonconductive nitride-nucleation enhancing monolayer is formed over a semiconductor assembly having both nitridation receptive and resistive materials. For purposes of the present invention, a nitride-nucleation enhancing monolayer is a material that will readily accept the bonding of nitrogen atoms to the material itself. Next, a silicon nitride layer is formed over the nonconductive nitride-nucleation enhancing monolayer. The nonconductive nitride-nucleation enhancing monolayer provides even nucleation over both the nitridation receptive material and the nitridation resistive material for silicon nitride, thereby allowing for the growth of a uniformly thin nitride layer.
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