Growth of the copper oxide nanowires from copper thin films deposited on silicon substrate

摘要

The growth mechanism of the CuO single crystal NWs for future device applications has been demonstrated using the copper films deposited on CuO buffered SiO₂/Si substrates. The indispensible requirements for the CuO NWs growth from the copper films are the presence of the compressive stress in the copper films and the presence of the Cu₂O seed phase on the copper films at a high temperature in air.