从热蒸发多孔氧化硅薄膜表面形貌研究其生长机理∗

摘要

Because the surface morphology of the film is correlated with its growth mechanism,its growth mechanism can be deduced from the evolution of the surface morphology.Porous silica films were prepared on Si sub-strates by thermal evaporation deposition methods.The surface morphology and composition of different samples were described by means of scanning electron microscope and X-ray energy dispersive spectroscopy,whose results indicated the prepared samples have porous structure composed of nanowires or stand-up nanosheets.The growth mechanisms of films,including the vapor-liquid-solid mechanism and oxide-assisted growth mechanism,were also discussed by Ma-rangoni effect and wetting theory.%薄膜的表面形貌与生长机理相关，因此可以通过研究薄膜表面形貌的演变来外推其生长机理。利用热蒸发法在硅片上制备了纳米多孔二氧化硅薄膜，利用扫描电镜(SEM)和 X 射线能谱(EDS)对不同样品的形貌、成分进行了表征。研究发现所制备的薄膜是由线状结构或直立的片状结构所构成的多孔结构。利用马拉高尼效应和润湿理论，对薄膜的气-液-固生长机理和氧化物辅助生长机理进行了探讨。