首页> 外国专利> METHOD FOR PRODUCTION OF POROUS SILICON OXIDE THIN FILM TRANSFER MATERIAL, AND METHOD FOR PRODUCTION OF MOLDED PRODUCT WITH POROUS SILICON OXIDE THIN FILM

METHOD FOR PRODUCTION OF POROUS SILICON OXIDE THIN FILM TRANSFER MATERIAL, AND METHOD FOR PRODUCTION OF MOLDED PRODUCT WITH POROUS SILICON OXIDE THIN FILM

机译:多孔氧化硅薄膜转移材料的生产方法以及模压产品与多孔氧化硅薄膜的生产方法

摘要

To provide a method for production of a porous silicon oxide thin film transfer material, prepared by laminating a porous silicon oxide thin film on the surface of a plastic base material by a sol-gel method, needing no heating process, applicable to high-accuracy optical members and enabling large-area short-time film formation.SOLUTION: A method for production of a porous silicon oxide thin film transfer material comprises: coating a binder liquid comprising a reaction composition obtained by hydrolysis and condensation reaction of a hydrolyzable silane compound, and a coating liquid for silicon oxide thin film formation on the surface of a tentative support comprising a plastic base material; drying the coated material; and hardening the coated material by irradiating with ultraviolet light under the presence of oxygen.SELECTED DRAWING: None
机译:本发明提供一种用于制造多孔氧化硅薄膜转移材料的方法,该方法是通过将溶胶-凝胶法将多孔氧化硅薄膜层压在塑料基材的表面上而无需加热工艺而制备的,该方法适用于高精度。解决方案:一种制备多孔氧化硅薄膜转移材料的方法包括:涂覆粘合剂液体,该粘合剂液体包含通过可水解硅烷化合物的水解和缩合反应获得的反应组合物,在含有塑料基材的试验性载体的表面上形成氧化硅薄膜的涂布液。干燥涂覆的材料;然后在氧气存在下用紫外线照射使涂层材料硬化。

著录项

  • 公开/公告号JP2019118851A

    专利类型

  • 公开/公告日2019-07-22

    原文格式PDF

  • 申请/专利权人 MITSUBISHI CHEMICAL HOLDINGS CORP;

    申请/专利号JP20170253101

  • 发明设计人 TAKAGI ATSUSHI;KATO YUICHI;

    申请日2017-12-28

  • 分类号B05D7/24;B32B9;B05D5;B05D3/06;B29C45/16;B29C45/26;

  • 国家 JP

  • 入库时间 2022-08-21 12:24:56

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