Sub-100 nm Triangular Nanopores Fabricated with the Reactive Ion Etching Variant of Nanosphere Lithography and Angle-Resolved Nanosphere Lithography

摘要

Nanosphere lithography (NSL) is combined with reactive ion etching (RIE) to fabricate ordered arrays of in-plane,triangular cross-section nanopores.Nanopores with in-plane widths ranging from 44 to 404 nm and depths ranging from 25 to 250 nm are demonstrated.The combination of angle-resolved nanosphere lithography (AR NSL) and RIE yields an additional three-fold reduction in nanopore size.