W-BAND RECEIVER MODULE USING INDIUM PHOSPHIDE AND GALLIUM ARSENIDE MMICS

摘要

This paper describes a low-noise, high-gain, single-sideband, downconverting receiver module developed for point-to-point telecommunications in the 82-104-GHz range. Two indium phosphide (InP) and two gallium arsenide (GaAs) monolithic microwave integrated circuits (MMICs) are used in the multi-chip module For RF frequencies in the 82-104-GHz range and within a 1-3-GHz IF band, the receiver exhibits a typical single-sideband down-conversion gain between 15 and 20 dB and a typical noise figure of between 4 and 5 dB. In the same frequency range, the suppression of the unwanted sideband is typically - 15 dB or more.