176-200-GHz RECEIVER MODULE USING INDIUM PHOSPHIDE AND GALLIUM ARSENIDE MMICs

摘要

This paper describes an integrated circuit-based, down-converting receiver module operating in the 176-200-GHz range. The multichip module incorporates a cascaded pair of indium phosphide (InP) monolithic microwave integrated circuit (MMIC) amplifiers, providing a combined gain of more than 30 dB over the 176-200-GHz band. The output from the amplifiers is fed to a subharmonically pumped InP passive-HEMT block down-converter that provides an IF output in the 0.5-15-GHz range with a local oscillator (LO) signal between 46 and 50 GHz A gallium arsenide (GaAs) medium-power amplifier provides the LO drive for the mixer. For RF frequencies in the 176-185-GHz band, the receiver exhibits a typical CW down-conversion gain between 0 and 3 dB and a typical noise figure of 9 dB when operating at room temperature, For RF frequencies in the 190-196-GHz band, the receiver exhibits a typical CW down-conversion gain between 2 and 5 dB and a typical noise figure of 11 dB.