A 176-190 GHz TRANSMITTER MODULE USING INDIUM PHOSPHIDE AND GALLIUM ARSENIDE MMICs

摘要

This paper describes a double-sideband, upconverting transmitter module with a potential application to future-generation point-to-point telecommunications in the 176-190-GHz band. The multi-chip module incorporates indium phosphide (InP) and gallium arsenide (GaAs) monolithic microwave integrated circuits (MMICs). It is believed that this is the first time an all-MMIC transmitter module has been reported in this frequency band. The small-signal up-conversion gain falls approximately monotonically from 0 dB for output at 176 GHz, to -15 dB for output at 190 GHz. The input frequency range covers 0.5 to 9 GHz and the local oscillator can be tuned from 45 to 47 GHz. Gain compression of 1-dB occurs at an output power of -12 dBm at 176 GHz, decreasing to -20 dBm at 190 GHz Output 3rd-order intercept point is +1 dBm at 176 GHz, decreasing to -12 dBm at 190 GHz.