Angular dependent characteristics of a 1.3-μm GaInNAs/GaAs quantum-well resonant cavity enhanced photodetect

Zhang Ruikang; Zhong Yuan; Zhang Wei; Xu Yingqiang; Du Yun; Huang Yongqing; Ren Xiaomin; Niu Zhichuan; Wu Ronghan

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Angular dependent characteristics of a 1.3-μm GaInNAs/GaAs quantum-well resonant cavity enhanced photodetect

机译：1.3μmGaInNAs / GaAs量子阱共振腔增强光电检测器的角度相关特性

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Characteristics of a 1.3-μm GaInNAs RCE PD with respect to the incident light angle were analyzed both in theoretical simulation and experiments. The results show the influence can be neglected when the light incidence angle is less than 30, This is a requirement for the PD to be applied in WDM networks.

机译：在理论模拟和实验中都分析了1.3μmGaInNAs RCE PD相对于入射光角的特性。结果表明，当入射角小于30°时，可以忽略该影响。这是PD在WDM网络中应用的要求。

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来源
《Microwave and optical technology letters》 |2002年第5期|共4页
作者
Zhang Ruikang; Zhong Yuan; Zhang Wei; Xu Yingqiang; Du Yun; Huang Yongqing; Ren Xiaomin; Niu Zhichuan; Wu Ronghan;
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正文语种 eng
中图分类光学;
关键词
GaInNAs quantum wells; Resonant cavity enhanced photodetector; WDM networks;

机译：GaInNAs量子阱;谐振腔增强光电探测器;WDM网络;

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专利

1. Angular dependent characteristics of a 1.3-μm GaInNAs/GaAs quantum-well resonant cavity enhanced photodetect [J] . Zhang Ruikang, Zhong Yuan, Zhang Wei, Microwave and optical technology letters . 2002,第5期

机译：1.3μmGaInNAs / GaAs量子阱共振腔增强光电检测器的角度相关特性
2. Enhanced optical performances of strain-compensated 1.3-μm GaInNAs/GaNAs/GaAs quantum-well structures [J] . E.-M. Pavelescu, T. Jouhti, C.S. Peng Journal of Crystal Growth . 2002,第1a2期

机译：应变补偿的1.3μmGaInNAs / GaNAs / GaAs量子阱结构的增强的光学性能
3. Back-incident SiGe-Si multiple quantum-well resonant-cavity-enhanced photodetectors for 1.3-/spl mu/m operation [J] . Cheng Li, Qinqing Yang IEEE Photonics Technology Letters . 2000,第10期

机译：背面入射SiGe-Si多量子阱谐振腔增强型光电探测器，用于1.3- / spl mu / m操作
4. GaInNAs/GaAs quantum wells resonant cavity enhanced photodetector [C] . Ruikang Zhang, Yuan Zhong, Yongqing Huang, International Conference on Telecommunications . 2002

机译：GAINNAS / GAAS量子孔谐振腔增强光电探测器
5. Resonant cavity enhanced multi-analyte sensing. [D] . Bergstein, David Alan. 2007

机译：谐振腔增强了多分析物感测。
6. Excitation energy-dependent nature of Raman scattering spectrum in GaInNAs/GaAs quantum well structures [O] . Ayse Erol, Elif Akalin, Fahrettin Sarcan, 2012

机译：GaInNAs / GaAs量子阱结构中拉曼散射光谱的激发能依赖性
7. Back-incident SiGe-Si multiple quantum-well resonant-cavity-enhanced photodetectors for 13-mu m operation [O] . Li C, Yang QQ, Wang HJ, 2000

机译：背面入射SiGe-Si多量子阱共振腔增强型光电探测器，用于13微米工作
8. Photopumped Room-Temperature Edge- and Vertical-Cavity Operation of AlGaAs-GaAs-InGaAs Quantum-Well Heterostructure Lasers Utilizing Native Oxide Mirrors [R] . Ries, M. J., Richard, T. A., Maranowski, S. A., 1994

机译：利用天然氧化物反射镜的alGaas-Gaas-InGaas量子阱异质结构激光器的光电泵浦室温边缘和垂直腔体操作

Angular dependent characteristics of a 1.3-μm GaInNAs/GaAs quantum-well resonant cavity enhanced photodetect

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