Improved thermal stability of nitrogen annealed sputtered hafnium oxide thin films for VLSI technology

摘要

High-dielectric thin films are considered as future dielectric for Si based advanced integrated circuit technology and also for thedevelopment of organic thin film transistors and micro sensors. The conventional dielectric Si02 is grown by thermal oxidation of silicon whereas theHf02 films are grown by both physical and chemical methods. Depending on film deposition technique, the film and interface characteristics areaffected. The purpose of this paper is to investigate the effect of thermal annealing in oxygen and nitrogen ambient on the electrical properties of Hf02-based metal oxide semiconductor (MOS) capacitor and evaluate thermal stability of the characteristics.