Photo luminescence studies of defects created in nitrogen-doped silicon during annealing under enhanced pressure

摘要

Defect evolution in nitrogen-implanted silicon subjected to thermal treatment at temperatures between 450 and 1000degreesC and up to 1.1 GPa (HP-HT treatment) was investigated. Dislocation-related emission with its maximum at 0.81 eV has been observed after HP-HT treatment at the low temperature of 450degreesC. It has been shown that HP stimulates the creation of this emission but the role of nitrogen in this process is much more pronounced. Presented results give an additional evidence that this emission can originate from the recombination between TDDs and dislocation-related acceptors. It was found that HP treatment introduces an additional disturbance in lattice resulting in the widening of the luminescence lines. The origin of 0.82 eV emission observed in Si:N after the HT-HP treatment at 1000degreesC and of the one at 0.93 V after the treatment at low temperature has been discussed. (C) 2004 Elsevier Ltd. All rights reserved.