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PHOTOLUMINESCENCE MAPPING OF PASSIVATION DEFECTS FOR SILICON PHOTOVOLTAICS
PHOTOLUMINESCENCE MAPPING OF PASSIVATION DEFECTS FOR SILICON PHOTOVOLTAICS
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机译:硅光伏钝化缺陷的光致发光映射
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摘要
Methods for fast and accurate mapping of passivation defects in a silicon wafer involve capturing of photoluminescence (PL) images while the wafer is moving, for instance, when the wafer is transported on a belt in a fabrication line. The methods can be applied to in-line diagnostics of silicon wafers in solar cell fabrication. Example embodiments include a procedure for obtaining the whole wafer images of passivation defects from a single image (map) of photoluminescence intensity, and can provide rapid feedback for process control.
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