The subimplantation model for hydrogenated amorphous carbon films deposited in electron cyclotron resonance plasma

摘要

The subimplantation model was used to explain the formation of a-C:H films deposited from a dual ECR-RF discharge of methane-argon (5%) mixture at low pressure. Combined optical transmission measurements, elastic recoil detection analysis, Raman spectra and residual stress measurements are used to fully characterise the films as deposited. The residual stress vs. bias plot shows a behavior similar to those already obtained for tetrahedral amorphous carbon (ta-C) and tetrahedral hydrogenated amorphous carbon (ta-C:H) films. In this study, the ions sticking the film surface are not monoenergetic, the stress data matches the theoretical model proposed by Davis. The optimum energy obtained is similar to that obtained for tetrahedral films.