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Conference on photodetectors: materials and devices

召开年：1998
召开地：San Jose, CA(US)
出版时间：-

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1.Large bandgap shift in InGaAs(P)/InP multi-quantum well structureobtained by impurity-free vacancy diffusion using SiO2 capping and itsapplication to photodetectors,

机译：InGaAs（P）/ InP多量子阱结构中的大带隙位移通过使用SiO2封盖的无杂质空位扩散获得，并将其应用于光电探测器，
- 作者：Sang-Kee Si;Seoul National Univ.;Seoul;South Korea;Sung-June Kim;Seoul National Univ.;Seoul;South Korea;Ju-Han Lee;Seoul National Univ.;Kwanak-Ku Seoul;South Korea;Deok Ho Yeo;Seoul National Univ.;Kwanak-Ku Seoul;South Korea;Kyung Hun Yoon;Seoul National Univ.;Kwanak-Ku Seoul;South Korea.
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
2.Novel InTlSb and InSbBi alloys for uncooled photodetector a

机译：用于非冷却光电探测器的新型InTlSb和InSbBi合金
- 作者：J.J. Lee;Northwestern Univ.;Evanston;IL;USA;Manijeh Razeghi;Northwestern Univ.;Evanston;IL;USA.
- 会议名称：《》 | 1998年
3.Silicon JFETs for cryogenic a

机译：低温A硅JFET
- 作者：Naresh C. Das;Hughes STX;Columbia;MD;USA;Sachidananda Babu;Ball Aerospace Technologies Corp.;Broomfield;CO;USA;Murzy D. Jhabvala;NASA Goddard Space Flight Ctr.;Greenbelt;MD;USA.
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
4.Wide-area thin film metal-semiconductor-metal photodetectors for lidar a

机译：激光雷达用广域薄膜金属半导体金属光电探测器
- 作者：Charles B. Morrison;TACAN Corp.;Vista;CA;USA;Andreas P. Glinz;TACAN Corp.;Carlsbad;CA;USA;Zheng Zhu;TACAN Corp.;Carlsbad;CA;USA;James H. Bechtel;TACAN Corp.;San Diego;CA;USA;Steven M. Frimel;Univ. of Cincinnati;Cincinnati;OH;USA;Kenneth P. Roenker;Univ. of Cincinnati;Cincinnati;OH;USA.
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
5.The Bi/Bi1-xSbx multiquantum well structure

机译：Bi / Bi1-xSbx多量子阱结构
- 作者：Xin-Jian Yi;Huazhong Univ. of Science;Technology;Wuhan;Hubei;China;Xin-Yu Zhang;Huazhong Univ. of Science;Technology;Wuhan;China;Yi Li;Huazhong Univ. of Science;Technology;Wuhan;China;Jian-Hua Hao;Huazhong Univ. of Science;Technology;Wuhan;China;Xing-Rong Zhao;Huazhong Univ. of Science;Technology;Wuhan Hubei;China.
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
6.Extended dynamical range solid state photon counter

机译：扩展的动态范围固态光子计数器
- 作者：Ivan Prochazka;Czech Technical Univ.;Prague;Czech Republic;Karel Hamal;Czech Technical Univ.;Prague;Czech Republic;Josef Blazej;Czech Technical Univ.;Prague;Czech Republic;Georg Kirchner;Austrian Academy of Science;Graz;Austria;Franz Koidl;Austrian Academy of Science;Graz;Austria.
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
7.Possibility of the development of vicinal superlattices in quantum wires on semiconductor low-index surfaces

机译：半导体低折射率表面上量子线附近的超晶格发展的可能性
- 作者：Victor A. Petrov;Institute of Radio Engineering;Electronics;Moscow;Russia.
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
8.Breakdown mechanisms in Al(GaN) MSM photodetectors

机译：Al（GaN）MSM光电探测器的击穿机理
- 作者：Ian T. Ferguson;EMCORE Corp.;Somerset;NJ;USA;M.J. Schurman;EMCORE Corp.;Somerset;NJ;USA;Robert F. Karlicek;Jr.;EMCORE Corp.;Somerset;NJ;USA;Zhe-Chuan Feng;EMCORE Corp.;Somerset;NJ;USA;S.Lianga;Rutgers Univ.;Piscataway;NJ;USA;Yicheng Lu;Rutgers Univ.;Piscataway;NJ;USA;Charles L. Joseph;Rutgers Univ.;Piscataway;NJ;USA.
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
9.Electrical transport properties of highly doped N-type GaN epilayers

机译：高掺杂N型GaN外延层的电传输性能
- 作者：Hyung J. Lee;Chonbuk National Univ.;Chonju;South Korea;M.G. Cheong;Chonbuk National Univ.;Chonju;South Korea;Eun-Kyung Suh;Chonbuk National Univ.;Chonju;South Korea;Manijeh Razeghi;Northwestern Univ.;Evanston;IL;USA.
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
10.Noise and photoconductivity in single quantum well infrared photodetectors

机译：单量子阱红外光电探测器中的噪声和光电导性
- 作者：Maxim Ershov;Univ. of Aizu;Aizu-Wakamatsu;Japan;A.N. Korotkov;Moscow State Univ.;Aizu-Wakamatsu;Japan.
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
11.P-type quantum well infrared photodetectors and pixelless long-wavelength infrared imaging devices

机译：P型量子阱红外光电探测器和无像素长波长红外成像装置
- 作者：Hui C. Liu;National Research Council;Ottawa;ON;Canada;L.Li;National Research Council;Ottawa;ON;Canada;Louis B. Allard;National Research Council;Ottawa;ON;Canada;Margaret Buchanan;National Research Council;Ottawa;ON;Canada;Z.R. Wasilewski;National Research Council;Ottawa;ON;Canada;Gail J. Brown;Air Force Research Lab.;Wright-Patterson AFB;OH;USA;Frank Szmulowicz;Air Force Research Lab.;Dayton;OH;USA;S.M. Hegde;Air Force Research Lab.;Dayton;OH;USA.
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
12.GaN p-i-n photodiodes with high visible-to-ultraviolet rejection ratio

机译：具有高可见-紫外抑制比的GaN p-i-n光电二极管
- 作者：Patrick Kung;Northwestern Univ.;Evanston;IL;USA;Xiaolong Zhang;Northwestern Univ.;Evanston;IL;USA;Danielle Walker;Northwestern Univ.;Evanston;IL;USA;Adam Saxler;Northwestern Univ.;Air Force Research Lab.;Evanston;IL;USA;Manijeh Razeghi;Northwestern Univ.;Evanston;IL;USA.
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
13.High-performance GaAs homojunction far-infrared detectors

机译：高性能GaAs同质结远红外探测器
- 作者：A. G. Unil Perera;Georgia State Univ.;Atlanta;GA;USA;W.Z. Shen;Georgia State Univ.;Atlanta;GA;USA;Hui C. Liu;National Research Council Canada;Ottawa;ON;Canada;Margaret Buchanan;National Research Council Canada;Ottawa;ON;Canada;William J. Schaff;Cornell Univ.;Ithaca;NY;USA.
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
14.Photoelectric performance degradation of several laser-irradiated Si detectors

机译：几种激光辐照的Si检测器的光电性能下降
- 作者：Jean-Pierre Moeglin;French-German Research Institute of Saint Louis;C NRS/Lab. de Physique et de Spectrosco;Saint Louis;France;Bernard Gautier;French-German Research Institute of Saint Louis;Saint Louis;France;Rene C. Joeckle;French-German Research Institute of Saint Louis;Saint Louis;France;Dominique Bolmont;Lab. de Physique et de Spectroscopie Eletronique/CNRS;Mulhouse Cedex;France.
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
15.Comparison of GaN Schottky barrier and p-n junction photodiodes

机译：GaN肖特基势垒与p-n结光电二极管的比较
- 作者：Michal J. Malachowski;Military Univ. of Technology;Warsaw 49;Poland;Antoni Rogalski;Military Univ. of Technology;Warszawa;Poland.
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
16.Comparison of the dark current from an AlGaAs/GaAs and AlGaN/GaN quantum well

机译：AlGaAs / GaAs和AlGaN / GaN量子阱的暗电流比较
- 作者：A.F. Anwar;Univ. of Connecticut;Storrs Mansfield;CT;USA;Kevin R. Lefebvre;Starrtel Cellular Group;Inc.;Storrs;CT;USA.
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
17.Computational materials science: an increasingly reliable engineering tool (example: defects in HgCdTe alloys)

机译：计算材料科学：日益可靠的工程工具（例如：HgCdTe合金中的缺陷）
- 作者：Arden Sher;SRI International;Menlo Park;CA;USA;M.van Schilfgaarde;SRI International;Menlo Park;CA;USA;M.A. Berding;SRI International;Menlo Park;CA;USA.
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
18.Epitaxial structures for reduced cooling of high-performance infrared detectors

机译：外延结构可减少高性能红外探测器的冷却
- 作者：Tim Ashley;Defence Evaluation;Research Agency;Malvern;Worcs;United Kingdom;Neil T. Gordon;Defence Evaluation;Research;Malvern Worcs;United Kingdom.
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
19.Growth and characterization of InAs/GaSb type-II superlattice for long-wavelength infrared detectors

机译：用于长波长红外探测器的InAs / GaSb II型超晶格的生长和表征
- 作者：Hooman Mohseni;Northwestern Univ.;Evanston;IL;USA;Erick J. Michel;Northwestern Univ.;Chicago;IL;USA;Manijeh Razeghi;Northwestern Univ.;Evanston;IL;USA;W.C. Mitchel;Air Force Research Lab.;Wright-Patterson AFB;OH;USA;Gail J. Brown;Air Force Research Lab.;Wright-Patterson AFB;OH;USA.
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
20.Impurity-free intermixing of InGaAs/GaAs-strained multiple quantum well infrared photodetectors

机译：InGaAs / GaAs应变多量子阱红外光电探测器的无杂质混合
- 作者：Alex S. Lee;Univ. of Hong Kong;Hong Kong;Hong Kong;E. Herbert Li;Univ. of Hong Kong;Harvard Univ.;Hong Kong;Hong Kong;R.P. Karunasiri;National Univ. of Singapore;Singapore;Singapore.
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
21.InAs/Ga1-xInxSb infrared superlattice photodiodes for infrared detection

机译：用于红外检测的InAs / Ga1-xInxSb红外超晶格光电二极管
- 作者：Frank Fuchs;Fraunhofer-Institut fuer Angewandte Festkoerperphysik;Freiburg;Germany;U.Weimar;Fraunhofer-Institut fuer Angewandte Festkoerperphysik;Freiburg;Germany;E.Ahlswede;Fraunhofer-Institut fuer Angewandte Festkoerperphysik;Freiburg;Germany;W.Pletschen;Fraunhofer-Institut fuer Angewandte Festkoerperphysik;Freiburg;Germany;J.Schmitz;Fraunhofer-Institut fuer Angewandte Festkoerperphysik;Freiburg;Germany;Marten Walther;Fraunhofer-Institut fuer Angewandte Festkoerperphysik;Freiburg;Germany.
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
22.Megahertz bandwidth AlxGa1-xN/GaN-based p-i-n detectors

机译：兆赫带宽基于AlxGa1-xN / GaN的p-i-n检测器
- 作者：G.Smith;Air Force Research Lab.;Wpafb;OH;USA;Michael J. Estes;Air Force Research Lab.;Wright Patterson;OH;USA;T.Dang;Air Force Research Lab.;Wpafb;OH;USA;Arnel A. Salvador;Univ. of Illinois/Urbana-Champaign;Urbana;IL;USA;Zhifang Fan;Univ. of Illinois/Urbana-Champaign;Urbana;IL;USA;Guangyu Xu;Univ. of Illinois/Urbana-Champaign;Urbana;IL;USA;A.Botchkarev;Univ. of Illinois/Urbana-Champaign;Urbana;IL;USA;Hadis Morkoc;Univ. of Illinois/Urbana-Champaign;Urbana;IL;USA;P.Wolf;Air Force Institute of Technology;Wpafb;OH;USA.
- 会议名称：《》 | 1998年
23.Mid-infrared photodetectors based on the InAs/InGaSb type-II superlattices

机译：基于InAs / InGaSb II型超晶格的中红外光电探测器
- 作者：Chih-Hsiang Lin;Univ. of Houston;Houston;TX;USA;Gail J. Brown;Air Force Research Lab.;Wright-Patterson AFB;OH;USA;W.C. Mitchel;Air Force Research Lab.;Wright-Patterson AFB;OH;USA;M.Ahoujja;Air Force Research Lab.;USA;Frank Szmulowicz;Air Force Research Lab.;Dayton;OH;USA.
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
24.Photoconductor arrays for a spectral-photometric far-infrared camera on SOFIA

机译：SOFIA上分光光度远红外摄像机的光电导体阵列
- 作者：Juergen Wolf;Deutsches Zentrum fuer Luft-und Raumfahrt e.V.;Berlin;Germany;Hans Driescher;Deutsches Zentrum fuer Luft-und Raumfahrt e.V.;Berlin;Germany;Josef Schubert;Deutsches Zentrum fuer Luft-und Raumfahrt e.V.;Berlin;Germany;D.Rabanus;Deutsches Zentrum fuer Luft-und Raumfahrt e.V.;Berlin;Germany;E.Paul;Deutsches Zentrum fuer Luft-und Raumfahrt e.V.;Berlin;Germany;K.Roesner;Deutsches Zentrum fuer Luft-und Raumfahrt e.V.;Berlin;Germany.
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
25.Photocurrent decay transient process in a Si1-xGex/Si superlattice

机译：Si1-xGex / Si超晶格中的光电流衰减瞬态过程
- 作者：X.L. Huang;Chonbuk National Univ.;Chonju;South Korea;Mun S. Jeong;Chonbuk National Univ.;Chonju;South Korea;O.H. Cha;Chonbuk National Univ.;Chonju;South Korea;J.Y. Kim;Chonbuk National Univ.;Chonju;South Korea;Eun-Kyung Suh;Chonbuk National Univ.;Chonju;South Korea;Hyung J. Lee;Chonbuk National Univ.;Chonju;South Korea.
- 会议名称：《》 | 1998年
26.Photoresist microparabolas for beam steering

机译：用于光束转向的光刻胶微抛物线
- 作者：Samuel K. Rotich;Univ. of Southampton;Southampton Hants;United Kingdom;Jim G. Smith;Univ. of Southampton;Highfield;United Kingdom;Alan G. Evans;Univ. of Southampton;Highfield;United Kingdom;Arthur Brunnschweiler;Univ. of Southampton;Highfield;United Kingdom.
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
27.Recent progress in GaInAsSb and InAsSbP photodetectors for mid-infrared wavelengths

机译：GaInAsSb和InAsSbP光电探测器在中红外波长方面的最新进展
- 作者：Zane A. Shellenbarger;AstroPower;Inc.;Newark;DE;USA;Michael G. Mauk;AstroPower;Inc.;Newark;DE;USA;Jeff Cox;AstroPower;Inc.;Newark;DE;USA;Joseph South;AstroPower;Inc.;Newark;DE;USA;Joseph D. Lesko;AstroPower;Inc.;Newark;DE;USA;Paul Sims;AstroPower;Inc.;Newark;DE;USA;Murzy D. Jhabvala;NASA Goddard Space Flight Ctr.;Greenbelt;MD;USA;Marilyn K. Fortin;NASA Goddard Space Flight Ctr.;Goddard SFC;MD;USA.
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
28.RF bias effects on properties of hydrogenated amorphous silicon deposited by electron cyclotron resonance plasma-enchanced chemical vapor deposition

机译：射频偏压对电子回旋共振等离子体增强化学气相沉积法沉积氢化非晶硅性能的影响
- 作者：Yoshiyuki Hirano;NHK Science;Technical Research Labs.;Tokyo;Japan;Fumio Sato;NHK Science;Technical Research Labs.;Tokyo;Japan;Ahalapitiya H. Jayatissa;NHK Science;Technical Research Labs.;Hamamatsu;Japan;Hiroshi Ohtake;NHK Science;Technical Research Labs.;Setagaya-ku Tokyo;Japan;Kuniharu Takizawa;NHK Science;Technical Research Labs.;Tokyo;Japan.
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
29.Selective formation of InxGa1-xAs quantum dots by molecular beam epitaxy

机译：通过分子束外延选择性形成InxGa1-xAs量子点
- 作者：Young Ju Park;Korea Institute of Science;Technology;Cheongryang Seoul;South Korea;Cheol Koo Hahn;Korea Institute of Science;Technology;Cheongryang Seoul;South Korea;Kwang Mu Kim;Korea Institute of Science;Technology;Cheongryang Seoul;South Korea;Suk Koo Jung;Korea Institute of Science;Technology;Cheongryang Seoul;South Korea;Eun-Kyu Kim;Korea Institute of Science;Technology;Cheongyang Seoul;South Korea;Suk-Ki Min;Korea Institute of Science;Technology;Cheongryang Seoul;South Korea.
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
30.Strain-compensated InGaAs/AlGaAsP quantum well intersubband photodetectors for mid-IR wavelengths

机译：用于中红外波长的应变补偿InGaAs / AlGaAsP量子阱子带间光电探测器
- 作者：Ken Bacher;Quantum Epitaxial Designs;Inc.;Bethlehem;PA;USA;W.K. Liu;Quantum Epitaxial Designs;Inc.;Bethlehem;PA;USA;Y.Wu;Quantum Epitaxial Designs;Inc.;Bethlehem;PA;USA;T.Stewart;Quantum Epitaxial Designs;Inc.;Bethlehem;PA;USA.
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
31.Large bandgap shift in InGaAs(P)/InP multi-quantum well structure obtained by impurity-free vacancy diffusion using SiO2 capping and its application to photodetectors

机译：SiO2封盖通过无杂质空位扩散获得的InGaAs（P）/ InP多量子阱结构中的大带隙位移及其在光电探测器中的应用
- 作者：Author(s): Sang-Kee Si Seoul National Univ. Seoul South Korea;Sung-June Kim Seoul National Univ. Seoul South Korea;Ju-Han Lee Seoul National Univ. Kwanak-Ku Seoul South Korea;Deok Ho Yeo Seoul National Univ. Kwanak-Ku Seoul South Korea;Kyung Hun Yoon Seoul National Univ. Kwanak-Ku Seoul South Korea.
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
32.Responsivity and noise performance of InGaAs/InP quantum well infrared photodetectors

机译：InGaAs / InP量子阱红外光电探测器的响应度和噪声性能
- 作者：Christopher Jelen;Northwestern Univ.;Evanston;IL;USA;Steven Slivken;Northwestern Univ.;Evanston;IL;USA;Thibaut David;Northwestern Univ.;Evanston;IL;USA;Gail J. Brown;Air Force Research Lab.;Wright-Patterson AFB;OH;USA;Manijeh Razeghi;Northwestern Univ.;Evanston;IL;USA.
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
33.RF magnetron sputtering deposition of CdTe passivation on HgCdTe

机译：HgCdTe上射频磁控溅射CdTe钝化沉积
- 作者：Jaroslaw Rutkowski;Military Univ. of Technology;Warsaw;Poland;Krzysztof Adamiec;Military Univ. of Technology;Warsaw;Poland;Antoni Rogalski;Military Univ. of Technology;Warszawa;Poland.
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
34.Corrugated QWIP array fabrication and characterization

机译：波纹QWIP阵列的制造和表征
- 作者：Kwong K. Choi;U.S. Army Research Lab.;Adelphi;MD;USA;Arnold C. Goldberg;U.S. Army Research Lab.;Adelphi;MD;USA;Naresh C. Das;Hughes STX;Columbia;MD;USA;Murzy D. Jhabvala;NASA Goddard Space Flight Ctr.;Greenbelt;MD;USA;Robert B. Bailey;Rockwell Science Ctr.;Thousand Oaks;CA;USA;Kadri Vural;Rockwell Science Ctr.;Thousand Oaks;CA;USA.
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
35.GaN/AlGaN UV photodiodes and phototransistors

机译：GaN / AlGaN UV光电二极管和光电晶体管
- 作者：Wei Yang;Honeywell Technology Ctr.;Plymouth;MN;USA;Thomas Nohava;Honeywell Technology Ctr.;Plymouth;MN;USA;S.Krishnankutty;Honeywell Technology Ctr.;Raleigh;NC;USA;Robert Torreano;Honeywell Technology Ctr.;Plymouth;MN;USA;Scott McPherson;Honeywell Technology Ctr.;Plymouth;MN;USA;Holly A. Marsh;Honeywell Technology Ctr.;Plymouth;MN;USA.
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
36.Recent progress in quantum well infrared photodetector research and development at Jet Propulsion Lab

机译：喷气推进实验室量子阱红外光电探测器的最新研究进展
- 作者：Timothy N. Krabach;Jet Propulsion Lab.;Amber;A Raytheon Co.;Pasadena;CA;USA;Sarath D. Gunapala;Jet Propulsion Lab.;Amber;A Raytheon Co.;Pasadena;CA;USA;Sumith V. Bandara;Jet Propulsion Lab.;Amber;A Raytheon Co.;Pasadena;CA;USA;John K. Liu;Jet Propulsion Lab.;Amber;A Raytheon Co.;Pasadena;CA;USA;Frederick S. Pool;Jet Propulsion Lab.;Amber;A Raytheon Co.;Pasadena;CA;USA;Deepak K. Sengupta;Jet Propulsion Lab.;Amber;A Raytheon Co.;Pasadena;CA;USA;C.A. Shott;Jet Propulsion Lab.;Amber;A Raytheon Co.;Goleta;CA;USA;R.Carralejo;Jet Propulsion Lab.;Amber;A Raytheon Co.;Goleta;CA;USA;Norman B. Stetson;Jet Propulsion Lab.;Amber;A Raytheon Co.;North Billerica;MA;USA.
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
37.Recent progress in quantum well infrared photodetector research and development at Jet Propulsion Lab.

机译：喷气推进实验室在量子阱红外光电探测器研发方面的最新进展。
- 作者：Author(s): Timothy N. Krabach Jet Propulsion Lab. and Amber A Raytheon Co. Pasadena CA USA;Sarath D. Gunapala Jet Propulsion Lab. and Amber A Raytheon Co. Pasadena CA USA;Sumith V. Bandara Jet Propulsion Lab. and Amber A Raytheon Co. Pasadena CA USA;John K. Liu Jet Propulsion Lab. and Amber A Raytheon Co. Pasadena CA USA;Frederick S. Pool Jet Propulsion Lab. and Amber A Raytheon Co. Pasadena CA USA;Deepak K. Sengupta Jet Propulsion Lab. and Amber A Raytheon Co. Pasadena CA USA;C.A. Shott Jet Propulsion Lab. and Amber A Raytheon Co. Goleta CA USA;R.Carralejo Jet Propulsion Lab. and Amber A Raytheon Co. Goleta CA USA;Norman B. Stetson Jet Propulsion Lab. and Amber A Raytheon Co. North Billerica MA USA.
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
38.Ultrafast electronic processes in CVD diamonds and GaAs: picosecond photoconductivity and high-voltage switching

机译：CVD金刚石和GaAs中的超快电子工艺：皮秒光电导和高压开关
- 作者：Serge V. Garnov;General Physics Institute;Moscow;Russia;Sergei M. Klimentov;General Physics Institute;Moscow;Russia;S.M. Pimenov;General Physics Institute;Moscow;Russia;Vitaly I. Konov;General Physics Institute;Moscow;Russia;V.V. Kononenko;General Physics Institute;Moscow;Russia;Olga G. Tsarkova;General Physics Institute;Moscow;Russia;S.Gloor;Univ. of Bern;Bern;Switzerland;Willy A. Luethy;Univ. of Bern;Bern;Switzerland;Heinz P. Weber;Univ. of Bern;Kehrsatz;Switzerland.
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
39.Ionization coefficient measurements in InP by using multiplication noise characteristics of InP/InGaAs separate absorption grading charge and multiplication (SAGCM) avalanche photodiodes (APDs)

机译：利用InP / InGaAs分离吸收分级电荷和乘法（SAGCM）雪崩光电二极管（APD）的乘法噪声特性测量InP中的电离系数
- 作者：Serguei An;Nortel Technology Ltd. (Canada);Simon Fraser Univ .;Nepean;ON;Canada;W.R. Clark;Nortel Technology Ltd.;Nepean;ON;Canada;Mohamed J. Deen;Simon Fraser Univ.;Delft;Netherlands;A.S. Vetter;Nortel Technology Ltd.;Nepean;ON;Canada;M.Svilans;Nortel Technology Ltd.;Nepean;ON;Canada.
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
40.Narrow-gap semiconductor photodiodes

机译：窄间隙半导体光电二极管
- 作者：Antoni Rogalski;Military Univ. of Technology;Warszawa;Poland;Manijeh Razeghi;Northwestern Univ.;Evanston;IL;USA.
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
41.Noise of high-Tc superconducting bolometers

机译：高温超导辐射热计的噪声
- 作者：Igor A. Khrebtov;S.I. Vavilov State Optical Institute;St. Petersburg;Russia;Vladimir N. Leonov;S.I. Vavilov State Optical Institute;St. Petersburg;Russia;A.D. Tkachenko;S.I. Vavilov State Optical Institute;St. Petersburg;Russia;Pavel V. Bratukhin;Moscow Institute of Engineering;Physics;Moscow;Russia;Andrey A. Ivanov;Moscow Institute of Engineering;Physics;Moscow;Russia;Alexander V. Kuznetsov;Moscow Institute of Engineering;Physics;Moscow;Russia;H.Neff;Univ. of Parabio/Campina Grande;Unterloess;Germany;Erwin Steinbeiss;Institut fuer Physikalische Hochtechnologie;Jena;Germany.
- 会议名称：《》 | 1998年
42.Strain effects in CdTe(111) layers on tilted Si(100) substrate by MBE

机译：MBE在倾斜Si（100）衬底上的CdTe（111）层中的应变效应
- 作者：Tae W. Kang;Dongguk Univ.;Seoul;South Korea;J.H. Leem;Dongguk Univ.;Seoul;South Korea;Y.B. Hou;Dongguk Univ.;Seoul;South Korea;H.C. Jeon;Dongguk Univ.;Seoul;South Korea;J.K. Hyun;Dongguk Univ.;Seoul;South Korea;H.Y. Lee;Dongguk Univ.;Seoul;South Korea;Min-Seog Han;Korea Electronics Co.;Ltd.;Kyungbuk-province;South Korea;Suk-Ryong Hahn;Korea Electronics Co.;Ltd.;Kyoungbuk-province;South Korea.
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
43.Ballistic electron emission microscopy (BEEM) of novel semiconductor heterostructures and quantum dots

机译：新型半导体异质结构和量子点的弹道电子发射显微镜（BEEM）
- 作者：Venkatesh Narayanamurti;Univ. of California/Santa Barbara;Santa Barbara;CA;USA.
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
44.Extended dynamical range solid state photon counter

机译：扩展动态范围固态光子计数器
- 作者：Ivan Prochazka;Karel Hamal;Josef Blazej;Georg Kirchner;Franz Koidl
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
45.Possibility of the development of vicinal superlattices in quantum wires on semiconductor low-index surfaces

机译：在半导体低折射率表面上的量子线上发展大众超晶格的可能性
- 作者：Victor A. Petrov
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
46.GaN p-i-n photodiodes with high visible-to-ultraviolet rejection ratio

机译：GaN P-I-N光电二极管具有高可见光紫外抑制比
- 作者：Patrick Kung;Xiaolong Zhang;Danielle Walker;Adam Saxler;Manijeh Razeghi
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
47.Photoelectric performance degradation of several laser-irradiated Si detectors

机译：几种激光照射Si检测器的光电性能降解
- 作者：Jean-Pierre Moeglin;Bernard Gautier;Rene C. Joeckle;Dominique Bolmont
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
48.Comparison of the dark current from an AlGaAs/GaAs and AlGaN/GaN quantum well

机译：从AlGaAs / GaAs和AlGaN / GaN量子的暗电流比较
- 作者：A.F. Anwar;Kevin R. Lefebvre
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
49.Megahertz bandwidth AlxGa1-xN/GaN-based p-i-n detectors

机译：Megahertz带宽Alxga1-XN / GaN的P-I-N探测器
- 作者：G.Smith;Michael J. Estes;T.Dang;Arnel A. Salvador;Zhifang Fan;Guangyu Xu;A.Botchkarev;Hadis Morkoc;P.Wolf
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
50.Recent progress in GaInAsSb and InAsSbP photodetectors for mid-infrared wavelengths

机译：升华的最近进展和中红外波长的光电探测器
- 作者：Zane A. Shellenbarger;Michael G. Mauk;Jeff Cox;Joseph South;Joseph D. Lesko;Paul Sims;Murzy D. Jhabvala;Marilyn K. Fortin
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
51.Growth and characterization of InAs/GaSb type-II superlattice for long-wavelength infrared detectors

机译：长波长红外探测器的INAS / GASB型II超晶格的生长和表征
- 作者：Hooman Mohseni;Erick J. Michel;Manijeh Razeghi;W.C. Mitchel;Gail J. Brown
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
52.Photoresist microparabolas for beam steering

机译：光致抗光致扫描梁转向
- 作者：Samuel K. Rotich;Jim G. Smith;Alan G. Evans;Arthur Brunnschweiler
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
53.Computational materials science: an increasingly reliable engineering tool (example: defects in HgCdTe alloys)

机译：计算材料科学：一种越来越可靠的工程工具（例如：HGCDTE合金中的缺陷）
- 作者：Arden Sher;M.van Schilfgaarde;M.A. Berding
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
54.Mid-infrared photodetectors based on the InAs/InGaSb type-II superlattices

机译：基于INAS / INGASB Type-II超晶格的中红外光电探测器
- 作者：Chih-Hsiang Lin;Gail J. Brown;W.C. Mitchel;M.Ahoujja;Frank Szmulowicz
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
55.RF bias effects on properties of hydrogenated amorphous silicon deposited by electron cyclotron resonance plasma-enchanced chemical vapor deposition

机译：RF偏置对电子回旋谐振等离子体叠加化学气相沉积沉积的氢化非晶硅性质的影响
- 作者：Yoshiyuki Hirano;Fumio Sato;Ahalapitiya H. Jayatissa;Hiroshi Ohtake;Kuniharu Takizawa
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
56.Photoconductor arrays for a spectral-photometric far-infrared camera on SOFIA

机译：在索非亚上的光谱 - 光度远红外相机的光电导体阵列
- 作者：Juergen Wolf;Hans Driescher;Josef Schubert;D.Rabanus;E.Paul;K.Roesner
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
57.Impurity-free intermixing of InGaAs/GaAs-strained multiple quantum well infrared photodetectors

机译：IngaAs / GaAs紧张多量子孔红外光电探测器的无杂质混合
- 作者：Alex S. Lee;E. Herbert Li;R.P. Karunasiri
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
58.Photocurrent decay transient process in a Si1-xGex/Si superlattice

机译：SI1-XGEX / SI超晶格中的光电流衰减瞬态过程
- 作者：X.L. Huang;Mun S. Jeong;O.H. Cha;J.Y. Kim;Eun-Kyung Suh;Hyung J. Lee
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
59.Epitaxial structures for reduced cooling of high-performance infrared detectors

机译：降低高性能红外探测器冷却的外延结构
- 作者：Tim Ashley;Neil T. Gordon
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
60.InAs/Ga1-xInxSb infrared superlattice photodiodes for infrared detection

机译：INAS / GA1-XINXSB红外超晶格光电二极管用于红外检测
- 作者：Frank Fuchs;U.Weimar;E.Ahlswede;W.Pletschen;J.Schmitz;Marten Walther
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
61.Comparison of GaN Schottky barrier and p-n junction photodiodes

机译：GaN Schottky屏障和P-N结光电二极管的比较
- 作者：Michal J. Malachowski;Antoni Rogalski
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
62.Responsivity and noise performance of InGaAs/InP quantum well infrared photodetectors

机译：InGaAs / InP量子孔红外光电探测器的响应性和噪声性能
- 作者：Christopher Jelen;Steven Slivken;Thibaut David;Gail J. Brown;Manijeh Razeghi
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
63.RF magnetron sputtering deposition of CdTe passivation on HgCdTe

机译：RF磁控管溅射CDTE钝化对HGCDTE的钝化
- 作者：Jaroslaw Rutkowski;Krzysztof Adamiec;Antoni Rogalski
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
64.Corrugated QWIP array fabrication and characterization

机译：瓦楞纸QWIP阵列制造和表征
- 作者：Kwong K. Choi;Arnold C. Goldberg;Naresh C. Das;Murzy D. Jhabvala;Robert B. Bailey;Kadri Vural
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
65.Ultrafast electronic processes in CVD diamonds and GaAs: picosecond photoconductivity and high-voltage switching

机译：超快电子过程中的CVD菱形和GaAs：PicoSecond光电导性和高压切换
- 作者：Serge V. Garnov;Sergei M. Klimentov;S.M. Pimenov;Vitaly I. Konov;V.V. Kononenko;Olga G. Tsarkova;S.Gloor;Willy A. Luethy;Heinz P. Weber
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
66.Strain effects in CdTe(111) layers on tilted Si(100) substrate by MBE

机译：CDTE（111）层的应变效应通过MBE倾斜的Si（100）衬底上的层
- 作者：Tae W. Kang;J.H. Leem;Y.B. Hou;H.C. Jeon;J.K. Hyun;H.Y. Lee;Min-Seog Han;Suk-Ryong Hahn
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
67.Noise of high-Tc superconducting bolometers

机译：高TC超导电荷仪的噪声
- 作者：Igor A. Khrebtov;Vladimir N. Leonov;A.D. Tkachenko;Pavel V. Bratukhin;Andrey A. Ivanov;Alexander V. Kuznetsov;H.Neff;Erwin Steinbeiss
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
68.Ionization coefficient measurements in InP by using multiplication noise characteristics of InP/InGaAs separate absorption grading charge and multiplication (SAGCM) avalanche photodiodes (APDs)

机译：使用INP / IngaAs单独吸收分级电荷和乘法（SAGCM）雪崩光电二极管（APDS）的电离系数测量InP中的电离系数测量
- 作者：Serguei An;W.R. Clark;Mohamed J. Deen;A.S. Vetter;M.Svilans
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
69.Narrow-gap semiconductor photodiodes

机译：窄间隙半导体光电二极管
- 作者：Antoni Rogalski;Manijeh Razeghi
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
70.Ballistic electron emission microscopy (BEEM) of novel semiconductor heterostructures and quantum dots

机译：新型半导体异质结构和量子点的弹道电子发射显微镜（贝E）
- 作者：Venkatesh Narayanamurti
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
71.The Bi/Bi1-xSbx multiquantum well structure

机译：BI / BI1-XSBX MultiQuantum阱结构
- 作者：Xin-Jian Yi;Xin-Yu Zhang;Yi Li;Jian-Hua Hao;Xing-Rong Zhao
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
72.Breakdown mechanisms in Al(GaN) MSM photodetectors

机译：Al（GaN）MSM光电探测器的击穿机制
- 作者：Ian T. Ferguson;M.J. Schurman;Robert F. Karlicek;Zhe-Chuan Feng;S.Lianga;Yicheng Lu;Charles L. Joseph
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
73.P-type quantum well infrared photodetectors and pixelless long-wavelength infrared imaging devices

机译：P型量子阱红外光电探测器和Pixelless长波长红外成像装置
- 作者：Hui C. Liu;L.Li;Louis B. Allard;Margaret Buchanan;Z.R. Wasilewski;Gail J. Brown;Frank Szmulowicz;S.M. Hegde
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
74.Noise and photoconductivity in single quantum well infrared photodetectors

机译：单量子孔红外光电探测器中的噪声和光电导性
- 作者：Maxim Ershov;A.N. Korotkov
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年
75.Electrical transport properties of highly doped N-type GaN epilayers

机译：高掺杂的N型GaN癫痫仪的电气传输性能
- 作者：Hyung J. Lee;M.G. Cheong;Eun-Kyung Suh;Manijeh Razeghi
- 会议名称：《Conference on photodetectors: materials and devices》 | 1998年