Photoelectric performance degradation of several laser-irradiated Si detectors

摘要

The modifications of the basic photoelectric properties in visible Si photodiodes irradiated by laser pulses have been measured and an attempt to link them to the observed/computed dopant distribution has been performed. These detectors have been irradiated 'in band' with two types of lasers: 1) a Q-switched Nd:YAG laser, frequency doubled with a 'short' pulse duration of 4 ns and 2) dye laser R6G with a 'long' pulse of 2 $mu@s. The single pulse fluence range extended form 0.4 to 50 J/cm$+2$/ well above the surface melting fluence threshold. Specially manufactured detectors have been tested. These detectors have a linearly graded junction with different resistivities. The detector responsivity decrease (DRD) vs applied irradiation fluence has been measured for both irradiation types. SIMS has been used to measure the changes in the dopant profile. It has been shown that a large spreading with a 'plateau like shape' of the boron distribution is obtained, resulting from a gas phase diffusion of dopant during the vaporization/condensation cycle. A relationship between DRD and boron profile has been established for Si detectors irradiated by the dye laser. A local sensitivity drop of 70 percent inside the damaged area location has been measured. Furthermore, it has been shown that high irradiation fluences induce a sequential loss of the different photoelectric properties rather than a complete detector breakdown at a prescribed fluence threshold.