Ballistic electron emission microscopy (BEEM) of novel semiconductor heterostructures and quantum dots

摘要

The measurement of heterojunction band parameters and their spatial variation is of fundamental importance for the operation of heterostructure devices. Ballistic electron emission microscopy (BEEM) is a powerful, new low energy electron microscopy for imaging and spectroscopy of buried quantum objects and non-destructive local characterization of buried semiconductor heterostructures with nm resolution. We will present several new and novel applications of BEEM for semiconductor heterostructure characterization.