Quantum dot capable of controlling electronic transition in smaller region than inherent bandgap beyond inherent absorption and emission region of quantum dot material and furthermore controlling electronic transition into localized surface plasmon resonance region

摘要

The present invention relates to: quantum dots capable of controlling electronic transition in a smaller region than an inherent band gap beyond an inherent absorption and emission region of quantum dot constituents, and furthermore controlling electronic transition into a localized surface plasmon resonance region; to a photo-detecting device comprising the quantum dots; to a quantum dot manufacturing method; and to an electronic transition control method of quantum dots.