Electrical transport properties of highly doped N-type GaN epilayers

摘要

Temperature-dependent Hall-effects in MOCVD-grown Si-doped GaN epilayers were measured as a function of temperature in the range 10-800 K. The results were satisfactorily analyzed in terms of a two-band model including the $Gamma and impurity bands at lower temperatures than room. The $Gamma band electrons are dominant only high temperatures. The ionized impurity scattering is the most important in the $Gamma band except at very high temperatures.