Electrical transport properties of highly Mg-doped GaN epilayers grown by MOCVD

摘要

In a temperature range of 750-1050deg.C rapid thermal annealing was carried out to activate Mg impurities in GaN epilayers grown on sapphire by metalorganic chemical vapor deposition. Activation increased with temperature until near 950deg.C, and then decreased very slowly with further increasing temperatures. Hall mobility decreased (from 16.5 cm~2/Vs at 750deg.C) with increasing annealing temperature until near 1000deg.C (12.8~2/Vs).